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Research data for: Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Version 1.1

Grzeszczyk, Magdalena; Vaklinova, Kristina; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Konstantin Sergeevich; Koperski, Maciej, 2024, "Research data for: Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions", https://doi.org/10.58132/B4QQ5E, Dane Badawcze UW, V1

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Description

The experimental data is related to the article: Electroluminescence from Pure Resonant States in hBN-based Vertical Tunneling Junctions.

Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.

Subject
Physics
Keyword

hexagonal boron nitride, electroluminescence, tunneling diode

Related Publication

Grzeszczyk, M., Vaklinova, K., Watanabe, K. et al. Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions. Light Sci Appl 13, 155 (2024). https://doi.org/10.1038/s41377-024-01491-5 https://doi.org/10.1038/s41377-024-01491-5 doi: 10.1038/s41377-024-01491-5

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fig_2_a_b.dat
Fixed Field Text Data - 3.7 KB - Jun 4, 2024 - 6 Downloads
MD5: 1f68f3a122534a96c942be466c0c1147
License: CC0 Creative Commons Zero 1.0
Electroluminescence from Gr/hBN:C/Gr devices. Tunnelling IV curve for a Gr/hBN:C/Gr (a) demonstrates activation of novel tunnelling paths. The device displays electroluminescence at a higher bias threshold, which can be seen from the dependence of the integrated light emission intensity on the tunnelling bias (b). The integration is done in the spectral region 1.2 – 3.9 eV. All measurements were made at T =5 K. The data is composed of three columns: 1. Tunnelling voltage (V) - the tunnelling voltage given in volts; 2. Integrated intensity of electroluminescence (counts) - 3. Tunnelling current (A) - the measured tunnelling current given in amperes.
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fig_2_g_1.dat
Fixed Field Text Data - 421.7 KB - Jun 4, 2024 - 2 Downloads
MD5: d26949ec744b921bb233e66f0896a545
License: CC0 Creative Commons Zero 1.0
Electroluminescence from Gr/hBN:C/Gr devices. The electroluminescence spectra for different bias voltages are presented under the forward biasing direction. All measurements were made at T =5 K. The data is composed of six columns: 1. Energy (eV) - the detected energy of the emitted photoluminescence signal given in electronvolts; 2. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 5.0 V given in counts; 3. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 5.2 V given in counts; 4. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 5.4 V given in counts; 5. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 5.6 V given in counts; 6. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 6.0 V given in counts.
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fig_2_h.dat
Fixed Field Text Data - 423.3 KB - Jun 4, 2024 - 1 Download
MD5: a48c460f69b679230a7d25fd6c7d51e7
License: CC0 Creative Commons Zero 1.0
Electroluminescence from Gr/hBN:C/Gr devices. The electroluminescence spectra for different bias voltages are presented under the reverse biasing direction. All measurements were made at T =5 K. The data is composed of six columns: 1. Energy (eV) - the detected energy of the emitted photoluminescence signal given in electronvolts; 2. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -6 V given in counts; 3. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -5.6 V given in counts; 4. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -5.4 V given in counts; 5. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -5.2 V given in counts; 6. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -5.0 V given in counts.
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fig_3_a_b.dat
Fixed Field Text Data - 8.1 KB - Jun 4, 2024 - 1 Download
MD5: af8582e5ef62a898ec406bbd394a1e2a
License: CC0 Creative Commons Zero 1.0
Electroluminescence from Gr/hBN/hBN:C/hBN/Gr devices. Tunnelling IV curves (a) and the integrated EL intensity dependence on the tunnelling bias (b) demonstrate the increase of the tunnelling and electroluminescence voltage threshold induced by additional pristine hBN barriers. All measurements were made at T =5 K. The data is composed of three columns: 1. Tunnelling voltage (V) - the tunnelling voltage given in volts; 2. Integrated intensity of electroluminescence (counts) - 3. Tunnelling current (A) - the measured tunnelling current given in amperes.
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fig_3_d.dat
Fixed Field Text Data - 382.3 KB - Jun 4, 2024 - 2 Downloads
MD5: a84017efaaea8441c37ed8fad60a405d
License: CC0 Creative Commons Zero 1.0
Electroluminescence from Gr/hBN:C/Gr devices. The electroluminescence spectra for different bias voltages are presented under the forward biasing direction. All measurements were made at T =5 K. The data is composed of six columns: 1. Energy (eV) - the detected energy of the emitted photoluminescence signal given in electronvolts; 2. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 10.0 V given in counts; 3. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 11.0 V given in counts; 4. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 12.0 V given in counts; 5. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 13.0 V given in counts; 6. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at 14.0 V given in counts.
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fig_3_e.dat
Fixed Field Text Data - 317.1 KB - Jun 4, 2024 - 1 Download
MD5: c4ff72d2d6ca5db2126c3b689aa4f1ff
License: CC0 Creative Commons Zero 1.0
Electroluminescence from Gr/hBN:C/Gr devices. The electroluminescence spectra for different bias voltages are presented under the reverse biasing direction. All measurements were made at T =5 K. The data is composed of six columns: 1. Energy (eV) - the detected energy of the emitted photoluminescence signal given in electronvolts; 2. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -10.0 V given in counts; 3. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -11.0 V given in counts; 4. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -12.0 V given in counts; 5. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -13.0 V given in counts; 6. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -14.0 V given in counts.
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fig_4_a_d.dat
Fixed Field Text Data - 216.7 KB - Jun 4, 2024 - 1 Download
MD5: f9b288b443724f1fcad98b3e172ee547
License: CC0 Creative Commons Zero 1.0
Electrical and optical excitation of carbon centers in hBN and the bias-driven control of the emission energy. The comparison of the photoluminescence and electroluminescence spectra for the Gr/hBN/hBN:C/hBN/Gr device (a). The photoluminescence spectrum was collected with 2.56 eV laser excitation. The laser was focused to a spot of 1 µm diameter with a power of 1 mW. Electroluminescence was measured with -14 V bias voltage, which corresponded to I_T = -2 µA. The data is composed of three columns: 1. Energy (eV) - the detected energy of the emitted photoluminescence signal given in electronvolts; 2. Intensity (counts) - the measured intensity of the emitted electroluminescence signal at -14 V bias voltage given in counts; 3. Intensity (counts) - the measured intensity of the emitted photoluminescence signal with a power of 1 mW of 2.56 eV laser excitation given in counts;
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fig_4_e_g.dat
Fixed Field Text Data - 19.6 KB - Jun 4, 2024 - 1 Download
MD5: fbfe677d7d0576c07c871a0f5cc242d2
License: CC0 Creative Commons Zero 1.0
Electrical and optical excitation of carbon centers in hBN and the bias-driven control of the emission energy. The energy of emission for defects A1, A2, and A3 changes with the tunneling bias in forward and reverse directions. The extrapolated zero-bias energy is offset by a few meV from the energy of the resonance in the photoluminescence spectrum. All measurements were made at T = 5 K. The data is composed of 13 columns: 1. Voltage (eV) - the applied tunnelling voltage given in volts; 2. Energy (eV) - the measured energy of the A1 center in forward direction of voltage given in electronovolts; 3. Energy (eV) - the measured energy of the A1 center in backward direction of voltage given in electronovolts; 4. Energy (eV) - extrapolated zero-bias energy of the A1 center given in electronovolts; 5. Energy (eV) - the measured energy of the A2 center in forward direction of voltage given in electronovolts; 6. Energy (eV) - the measured energy of the A2 center in backward direction of voltage given in electronovolts; 7. Energy (eV) - extrapolated zero-bias energy of the A2 center given in electronovolts; 8. Energy (eV) - the measured energy of the A3 center (peak 1) in forward direction of voltage given in electronovolts; 9. Energy (eV) - the measured energy of the A3 center (peak 1) in backward direction of voltage given in electronovolts; 10. Energy (eV) - extrapolated zero-bias energy of the A3 center (peak 1) given in electronovolts; 11. Energy (eV) - the measured energy of the A3 center (peak 2) in forward direction of voltage given in electronovolts; 12. Energy (eV) - the measured energy of the A3 center (peak 2) in backward direction of voltage given in electronovolts; 13. Energy (eV) - extrapolated zero-bias energy of the A3 center (peak 2) given in electronovolts;
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